3月ch 30, 2021 Embedded & Emerging Memory World’s First 1 Gb 28 nm STT-MRAM Product - by Everspin Everspin’s new 1-Gigabit (Gb) Spin Torque Transfer Magneto-resistive Random Access Memory (STT-MRAM) device with a 28 nm process is the world’s first 1 Gb STT-MRAM product. This 4th generation MRAM