UnitedSiC 750V, 18mΩ Gen 4 SiC FET Process Flow Full

Contact Us

产品代码
PFF-2103-802
Release Date
Availability
In Creation
Product Item Code
UNT-UJ4C075018K4S
Device Manufacturer
UnitedSiC
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Process Flow
Report Code
PFF-2103-802
UnitedSiC 750V, 18mΩ Gen 4 SiC FET It is industry's 1st 750V SiC FETs Driven with gate voltages compatible with SiC MOSFETs, Si MOSFETs or IGBTs, so competitive AEC-Q101 qualified
TechInsights Library

A unique vault of trusted, accurate data at your fingertips

Our analysis goes as deep as required to reveal the inner workings and secrets behind a broad range of products.

Learn more

Searchour analysis and website

Related Analysis Manufacturer Analysis Type Subscription Channel
GeneSiC G2R120MT33J 3300V 120 mΩ SiC MOSFET Power Floorplan Analysis GeneSiC Process Power Semiconductor - Silicon Carbide (SiC) Floorplan
Efficient Power Conversion EPC2218 100V GaN Power Floorplan Analysis EFFICIENT POWER CONVERSION Floorplan Power Semiconductor - Gallium Nitride (GaN) Floorplan
Toshiba TW070J120B 1200V Silicon Carbide (SiC) Process Flow Analysis Toshiba Process Power Semiconductor - Silicon Carbide (SiC) Process Flow
UnitedSiC 750V, 18mΩ Gen 4 SiC FET Power Essentials UnitedSiC Process Power Semiconductor - Power Essentials
UnitedSiC 750V, 18mΩ Gen 4 SiC FET Power Floorplan Analysis UnitedSiC Process Power Semiconductor - Silicon Carbide (SiC) Floorplan
Microsemi MSC025SMA120B 1200V SiC Power Floorplan Analysis Microsemi Process Power Semiconductor - Silicon Carbide (SiC) Floorplan
UnitedSiC 750V, 18mΩ Gen 4 SiC FET Process Flow Full UnitedSiC Process Power Semiconductor - Silicon Carbide (SiC) Process Flow
UnitedSiC 750V, 18mΩ Gen 4 SiC FET Process Flow Analysis UnitedSiC Process Power Semiconductor - Silicon Carbide (SiC) Process Flow
Infineon IM828-XCC 1200 V CoolSiC IPM Power Floorplan Analysis Infineon Packaging Power Semiconductor - Silicon Carbide (SiC) Floorplan
Toshiba TW070J120B 1200 V Silicon Carbide (SiC) Power Essentials Toshiba Process Power Semiconductor - Power Essentials