Micron MT53E384M32D2DS-053 1x nm 12 Gb DDR4 SDRAM Memory Floorplan Analysis

公关oduct Code
MFR-1906-802
Release Date
20/08/2019
Availability
Published
公关oduct Item Code
MIC-MT53E384M32D2DS-053
Device Manufacturer
Micron Technology
Device Type
DRAM
Subscription
Memory - NAND & DRAM
Channel
内存(DRAM楼层平面图分析
Report Code
MFR-1906-802
This report presents a Memory Floorplan Analysis of the Micron Z1AM die found inside the Micron MT53E384M32D2DS-053 DDR4 SDRAM component.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Plan-view SEM micrograph of the memory array delayered to active, word line (WL), and bit line (BL) layers
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in CircuitVision
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

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