产品代码
MDP-2008-801.
可用性
在创作中
产品项目代码
Hyn-H25FTB0.
设备制造商
海瑞克斯
订阅
记忆 - NAND＆DRAM
渠道
记忆 - NAND外围设计
报告代码
MDP-2008-801.
The world’s first 128L 3D NAND (referred to as 4D NAND by SK Hynix) SK Hynix 128L TLC 512 Gb die It shows a vertical cell efficiency increased to 87.1 %, and memory bit density with 8.11 Gb/mm2 which is comparable with 9xL QLC dies from Samsung (92L) and KIOXIA (96L).
