Samsung K3UH5H50MM-NGCJ Low Power DDR4X Mobile DRAM 18 nm Exploratory Report

The report summarizes an exploratory analysis of the Samsung K3UH5H50MM-NGCJ low power DDR4X mobile DRAM extracted from the Samsung Galaxy S8 (model SM-G950W). The Samsung K3UH5H50MM-NGCJ contains the K4F8E164HM die, fabricated with an 18 nm DRAM process.

该报告包括以下results:

• Product teardown optical images
• Package and die optical images
• Plan-view scanning electron microscopy (SEM) images of the memory array and the memory peripheral areas
• SEM cross section images along the bit line direction
• SEM cross section images along the word line direction
• Dimensional analysis