Posted: January 17, 2018
三星64L 3D V-NAND
三星于2017年1月发布了64L 3D V-NAND解决方案，以便于宗教客户，并于6月份升高为其扩大的一般市场。
这innovation included the following highlights:
- 垂直NAND电池结构，带有71个门和20nm BL一半间距
- A NAND string configuration likely with 64 word lines, 4 DWLs, 2 string select lines and 1 ground select line
- 9 channel hole integration between common source line including 1 dummy hole
- 电荷捕集层和隧道氧化物的层压层沉积
- Mask design updated for WL Pad trimming
- Medium Voltage Transistor instead of Low Voltage Transistor on X-dec
这re are many reasons this device caught our attention, and we have conducted a great deal of analysis on it. We are offering the reports defined below about the Samsung 64L 3D V-NAND, as well as information available through our various subscription products and tools.
