Samsung 18 nm DRAM Analysis

Posted: December 15, 2017

2017年4月,三星成为了world’s first manufacturer to mass produce 10 nm-class DRAM. In June 2017,TechInsights published a blogbased on our first learnings on this innovation that detailed a memory density increase of 32.8% when comparing 8Gb DRAM 18 nm and 20 nm die.

Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

发现波平S8和S8 +谷歌像素2 (G011A)and others
K4F8E164HM die extracted from the Samsung Galaxy S8 model SM-G950W
366 FBGA
32Gb

K4A8G085WC-BCRC (DDR4)

K4A8G085WC die extracted from the Samsung M471A2K43CB1-CRC SO-DIMM
78 FBGA
8GB

Download product information on Samsung 18nm DDR and LPDDR4X

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Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Samsung K4A8G085WC-BCRC 18 nm DRAM Advanced Memory Essentials	Samsung	Process	Memory - Process
Samsung K3UH5H50MM-NGCJ Low Power DDR4X Mobile DRAM 18 nm Exploratory Report	Samsung

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Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

K4A8G085WC-BCRC (DDR4)

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